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| IPB45N06S3-16 IPI45N06S3-16, IPP45N06S3-16 OptiMOS(R)-T Power-Transistor Features * N-channel - Enhancement mode * Automotive AEC Q101 qualified * MSL1 up to 260C peak reflow * 175C operating temperature * Green package (lead free) * Ultra low Rds(on) * Avalanche tested PG-TO263-3-2 Product Summary V DS R DS(on),max (SMD version) ID 55 15.4 45 V m A PG-TO262-3-1 PG-TO220-3-1 Type IPB45N06S3-16 IPI45N06S3-16 IPP45N06S3-16 Package PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 Ordering Code SP0001-02224 SP0001-02217 SP0001-02218 Marking 3N0616 3N0616 3N0616 Maximum ratings, at T j=25 C, unless otherwise specified Parameter Continuous drain current1) Symbol Conditions ID T C=25 C, V GS=10 V T C=100 C, V GS=10 V2) Pulsed drain current2) Avalanche energy, single pulse3) Drain gate voltage2) Gate source voltage4) Power dissipation Operating and storage temperature IEC climatic category; DIN IEC 68-1 I D,pulse E AS V DG V GS P tot T j, T stg T C=25 C T C=25 C I D= 27.5 A Value 45 33 180 95 55 20 65 -55 ... +175 55/175/56 V W C mJ Unit A Rev. 1.0 page 1 2005-11-25 IPB45N06S3-16 IPI45N06S3-16, IPP45N06S3-16 Parameter Symbol Conditions min. Thermal characteristics2) Thermal resistance, junction - case Thermal resistance, junction ambient, leaded SMD version, device on PCB R thJC R thJA R thJA minimal footprint 6 cm2 cooling area5) Electrical characteristics, at T j=25 C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current V (BR)DSS V GS=0 V, I D=250 A V GS(th) I DSS V DS=V GS, I D=30 A V DS=25 V, V GS=0 V, T j=25 C V DS=25 V, V GS=0 V, T j=125 C1) Gate-source leakage current Drain-source on-state resistance I GSS R DS(on) V GS=20 V, V DS=0 V V GS=10 V, I D=23 A V GS=10 V, I D=23 A, SMD version 55 2.1 3 0.1 4 1 A V 2.3 62 62 40 K/W Values typ. max. Unit - 1 1 13.5 13.2 100 100 15.7 15.4 nA m Rev. 1.0 page 2 2005-11-25 IPB45N06S3-16 IPI45N06S3-16, IPP45N06S3-16 Parameter Symbol Conditions min. Dynamic characteristics2) Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics2) Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage Reverse Diode Diode continous forward current Diode pulse current2) Diode forward voltage2) IS I S,pulse V SD T C=25 C V GS=0 V, I F=45 A, T j=25 C V R=27.5 V, I F=I S, di F/dt =100 A/s V R=27.5 V, I F=I S, di F/dt =100 A/s 1.1 45 180 1.3 V A Q gs Q gd Qg V plateau V DD=11 V, I D=45 A, V GS=0 to 10 V 23 10 43 7.2 57 V nC C iss C oss Crss t d(on) tr t d(off) tf V DD=27.5 V, V GS=10 V, I D=45 A, R G=22 V GS=0 V, V DS=25 V, f =1 MHz 2980 450 430 28 61 26 68 ns pF Values typ. max. Unit Reverse recovery time2) t rr - - - ns Reverse recovery charge2) Q rr - - - nC Current is limited by bondwire; with an R thJC = 2.3 K/W the chip is able to carry 46A at 25C. For detailed information see Application Note ANPS071E at www.infineon.com/optimos 2) 3) 4) 5) 1) Defined by design. Not subject to production test. See diagrams 12 and 13. Qualified at -5V and +20V. Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm 2 (one layer, 70 m thick) copper area for drain connection. PCB is vertical in still air. Rev. 1.0 page 3 2005-11-25 IPB45N06S3-16 IPI45N06S3-16, IPP45N06S3-16 1 Power dissipation P tot=f(T C); V GS6 V 2 Drain current I D=f(T C); V GS10 V 70 50 60 40 50 30 P tot [W] 40 30 I D [A] 20 10 0 0 50 100 150 200 0 50 100 150 200 20 10 0 T C [C] T C [C] 3 Safe operating area I D=f(V DS); T C=25 C; D =0 parameter: t p 1000 4 Max. transient thermal impedance Z thJC=f(t p) parameter: D =t p/T 101 0.5 limited by on-state resistance 1 s 10 s 0.1 10 0 0.2 100 Z thJC [K/W] I D [A] 100 s 0.05 10 -1 0.02 1 ms 10 10 -2 0.01 single pulse 1 0.1 1 10 100 10-3 10-7 10-6 10-5 10-4 10-3 10-2 10-1 100 V DS [V] t p [s] Rev. 1.0 page 4 2005-11-25 IPB45N06S3-16 IPI45N06S3-16, IPP45N06S3-16 5 Typ. output characteristics I D=f(V DS); T j=25 C parameter: V GS, pulsed 160 140 10 V 6 Typ. drain-source on resistance R DS(on)=f(I D); T j=25 C parameter: V GS 30 7V 8V 9V 120 100 25 R DS(on) [m] I D [A] 80 8V 20 60 40 20 0 0 5 10 15 10V 7V 6.5 V 6V 5.5 V 15 10 0 20 40 60 80 100 V DS [V] I D [A] 7 Typ. transfer characteristics I D=f(V GS); V DS=10 V parameter: T j 100 8 Drain-source on-state resistance R DS(on)=f(T j); I D=20 A; V GS=10 V 30 25 -55 C 75 20 I D [A] 25 C R DS(on) [m] 50 15 175 C 10 25 5 0 2 3 4 5 6 7 8 0 -60 -20 20 60 100 140 180 V GS [V] T j [C] Rev. 1.0 page 5 2005-11-25 IPB45N06S3-16 IPI45N06S3-16, IPP45N06S3-16 9 Typ. gate threshold voltage V GS(th)=f(T j); V GS=V DS parameter: I D 4 3.5 Ciss 10 Typ. capacitances C =f(V DS); V GS=0 V; f =1 MHz 104 3 2.5 300A 30A V GS(th) [V] Coss C [pF] 2 1.5 1 0.5 0 -60 -20 20 60 100 140 180 103 Crss 102 0 5 10 15 20 25 30 T j [C] V DS [V] 11 Forward characteristics of reverse diode I F=f(V SD), pulsed parameter: T j 1000 12 Typ. avalanche characteristics I AS=f(t AV) parameter: T j(start) 100 100 100C 25C I AV [A] I F [A] 10 150C 175 C 25 C 10 1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 1 1 10 100 1000 V SD [V] t AV [s] Rev. 1.0 page 6 2005-11-25 IPB45N06S3-16 IPI45N06S3-16, IPP45N06S3-16 13 Typ. avalanche energy E AS=f(T j ) parameter: I D 300 15 A 15 Drain-source breakdown voltage V BR(DSS)=f(T j); I D=1 mA 66 64 250 62 60 200 V BR(DSS) [V] 25 A 58 56 54 52 50 E AS [mJ] 150 100 45 A 50 48 0 0 50 100 150 200 46 -60 -20 20 60 100 140 180 T j [C] T j [C] 14 Typ. gate charge V GS=f(Q gate); I D=45 A pulsed parameter: V DD 12 11V 16 Gate charge waveforms 44V V GS Qg 10 8 V GS [V] 6 4 2 Q gd Q gate Q gs 0 0 20 40 60 Q gate [nC] Rev. 1.0 page 7 2005-11-25 IPB45N06S3-16 IPI45N06S3-16, IPP45N06S3-16 Package Outline P-TO263-3-2: Outline 158 Footprint Packaging Dimensions in mm Rev. 1.0 page 8 2005-11-25 IPB45N06S3-16 IPI45N06S3-16, IPP45N06S3-16 Published by Infineon Technologies AG St.-Martin-Strae 53 D-81541 Munchen (c) Infineon Technologies AG 2004 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices, please contact your nearest Infineon Technologies office in Germany or our Infineon Technologies representatives worldwide (see address list). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact your nearest Infineon Technologies office. Infineon Technologies' components may only be used in life-support devices or systems with the expressed written approval of Infineon Technologies if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 1.0 page 9 2005-11-25 |
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